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(Datasheet) TC551632J-35

32K Word x 16-Bit CMOS Static RAM

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TC551632J-35 pdf
TOSHIBA
11:5516321-20/25/35
SILICON GATE CMOS
32,768 WORD x 16 BIT CMOS STATIC RAM
Description
The TC551632J is a 524,288 bit high speed CMOS static random access memory organized as 32,768 words by 16 bits and
operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable hi~peed operation.
The TC551632J features low power dissipation when the device is deselected using chip enable (CE), and has an output
enable input (OE) for fast memory access. Byte access is supported by upper and lower byte controls.
The TC551632J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and out-
puts are TIL compatible.
The TC551632J is available in a 400mil width, 40-pin SOJ suitable for high density surface assembly.
Features
• Fast access time
- TC551632J-20 20ns (max.)
- TC551632J-25 25ns (max.)
- TC551632J-35 35ns (max.)
• Low power dissipation
Cycle Time
20
Operation (max.)
- Standby:
1mA (max.)
• Single 5V power supply: 5V±10%
• Fully static operation
• Inputs and outputs TIL compatible
• Output buffer control:
OE
• Data byte controls:
LB, UB
• Package:
SOJ40-P-400
Pin Names
AO - A14
1/01 - 1/016
CE
WE
OE
LB, UB
VDD
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Write Enable Input
Output Enable Input
Data Byte Control Inputs
Power (+5V)
Ground
Pin Connection (Top View)
TC551632J
A3
A2
Al
AO
CE
VOl
1/02
1103
1104
Voo
GND
1105
1/06
1/07
1108
WE
A14
A13
A12
All
A4
AS
ill
UB
LB
1/016
11015
1/014
1/013
GND
Voo
1/012
11011
1/010
1109
A6
A7
A8
A9
A10
(SOJ)
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
8·95
Toshiba
Toshiba


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