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(Datasheet) TC51864FL-85

SILICON GATE CMOS PSEUDO STATIC RAM

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TC51864FL-85 pdf
TOSHIBA
SILICON GATE CMOS
65,536 WORD x 8 BIT CMOS PSEUDO STATIC RAM
1l:51864PL/FL~5/10
PRELIMINARY
Description
The TC51864PL is a 512K bit high speed CMOS pseudo static RAM organized as 65,536 words by 8 bits. The TC51864PL utilizes
a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The
TC51864PL operates from a single 5V power supply. Refreshing is supported by a refresh (RFSH) input which enables two types of
refreshing - auto refresh and self refresh. The TC51864PL features a static RAM-like interface with a write cycle in which the input
data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface.
The TC51864PL is available in a 32-pin, 0.6 inch width plastic DIP, and a small outline plastic flat package.
Features
• Organization: 65,536 words x 8 bits
• Single 5V power supply
• Fast access time
TC51864 Family
-85 -10
tCEA CE Access Time
tOEA OE Access Time
tRC Cycle Time
Power Dissipation
Self Refresh Current
85ns
100ns
35ns
40ns
135ns
160ns
385mW 330mW
100J,LA
• Auto refresh is supported by an internal refresh address
counter
• Self refresh is supported by an internal timer
• Inputs and outputs TIL compatible
• Refresh: 256 refresh cycles/4ms
• Package
- TC51864PL: DIP32-P-600
- TC51864FL: SOP32-P-525
Pin Names
AO - A15
Address Inputs
RIW
Read/Write Control Input
OE Output Enable Input
RFSH
Refresh Input
CE Chip Enable Input
CS Chip Select Input
1/01 -1/08 Data Inputs/Outputs
Voo
GND
Power
Ground
NC No Connect
Pin Connection (Top View)
RFSH
NC
A14
A12
A7
A6
AS
A4
A3
A2
Al
AO
1/01
1102
1/03
GNO
Voo
A15
CS
RIW
A13
A8
A9
A 11
OE
A10
CE
1108
1107
1106
'1105
1104
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
D-9
Toshiba
Toshiba


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