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TC511632FL-85 Datasheet

SILICON GATE CMOS PSEUDO STATIC RAM

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TC511632FL-85 pdf
Static RAM
TC511632FUFTL-70/8511 0
DC Recommended Operating Conditions
SYMBOL
PARAMETER
Voo Power Supply Voltage
V IH Input High Voltage
VIL Input Low Voltage
MIN. TYP. MAX. UNIT NOTES
4.5 5.0
5.5
V
-2.4 Voo+ 1.0 V
--0.5 0.8 V
2
DC Characteristics (Ta = 0 - 70°C, Voo = 5V±10%)
SYMBOL
PARAMETER
MIN. TYP. MAX. UNIT NOTES
Operating Current (Average)
1000 CE, Address cycling: tRC = tRc min.
70ns version
85ns version
100ns version
- 60 80
- 50 70 rnA 3,4
- 40 60
100S1
IOOS2
Standby Current
CE = VIH" All other pins = VIH or VIL
Standby Current
CE = Voo - 0.2V, All other pins = Voo - 0.2V or 0.2V
--
1 rnA
- - 100 ~
100F1
100F2
Self Refresh Current (Average)
CE = VIH, LOE/RFSH = VIL, All other pins = VIH or VIL
Self Refresh Current (Average)
CE = Voo - 0.2V, LOE/RFSH = 0.2V, All other pins = Voo - 0.2V or 0.2V
-
-
- 1 rnA
50 100 ~
II(L)
10(L)
VOH
VOL
Input Leakage Current
OV ::; VIN ::; Voo, All other inputs not under test = OV
Output Leakage Current
Output Disabled (CE = VIH or LOE/RFSH = VIH or LWE = Vld
OV::; VOUT ::; Voo
UOE =VIH UWE=VIL
Output High Level
10H = -1mA
Output Low Level
10L= 2.1mA
- - ±10 ~
- - ±10 ~
2.4 - - V
- - 0.4 V
= = =Capacitance* (Voo 5V, Ta 25°C, f 1MHz)
SYMBOL
PARAMETER
CI1 Input Capacitance (AO - A14)
CI2 Input Capacitance (CE, LOEIRFSH, UOE, LWE, UWE)
CIO Input/Output Capacitance
*This parameter is periodically sampled and is not 100% tested.
MIN. MAX. UNIT
-5
- 7 pF
-7
PRELIMINARY
TDSHIBA AMERICA ELECTRONIC CDMPONENTS, INC.
D-21
Toshiba
Toshiba



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