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SVS7N65MJ Datasheet

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Silan
Microelectronics
SVS7N65F/D/MJ_Datasheet
7A, 650V DP MOS POWER TRANSISTOR
GENERAL DESCRIPTION
SVS7N65F/D/MJ is an N-channel enhancement mode high voltage
power MOSFETs produced using the new platform of Silan’s DP MOS
technology. It achieves low conduction loss and switching losses. It
leads the design engineers to their power converters with high
efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.e., suitable for hard and soft
switching topologies.
2
1
3
1.Gate 2.Drain 3.Source
1
3
TO-252-2L
FEATURES
7A, 650V, RDS(on)(typ)=0.66@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
123
TO-220F-3L
123
TO-251J-3L
ORDERING INFORMATION
Part No.
SVS7N65F
SVS7N65D
SVS7N65DTR
SVS7N65MJ
Package
TO-220F-3L
TO-252-2L
TO-252-2L
TO-251J-3L
Marking
SVS7N65F
SVS7N65D
SVS7N65D
SVS7N65MJ
Material
Halogen free
Halogen free
Halogen free
Halogen free
Packing
Tube
Tube
Tape & Reel
Tube
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Characteristics
Symbol
SVS7N65F
Ratings
SVS7N65D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25°C
TC=100°C
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
650
±30
7.0
4
25
35 48
0.28 0.38
263
-55+150
-55+150
SVS7N65MJ
Unit
V
V
A
A
50 W
0.40 W/°C
mJ
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.0
Page 1 of 8
Silan Microelectronics
Silan Microelectronics


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