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SVS6N80T Datasheet

TRANSISTOR

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SVS6N80T/D/F_Datasheet
6A, 800V DP MOS POWER TRANSISTOR
DESCRIPTION
SVS6N80T/D/F is an N-channel enhancement mode high voltage
power MOSFETs produced using the new platform of Silan’s DP
MOS technology. It achieves low conduction loss and switching
losses. It leads the design engineers to their power converters with
high efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.e., suitable for hard and soft
switching topologies.
FEATURES
6A,800V, RDS(on)(typ.)=0.8@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
ORDERING INFORMATION
Part No.
SVS6N80T
SVS6N80D
SVS6N80DTR
SVS6N80F
Package
TO-220-3L
TO-252-2L
TO-252-2L
TO-220F-3L
Marking
SVS6N80T
SVS6N80D
SVS6N80D
SVS6N80F
Material
Pb free
Halogen free
Halogen free
Pb free
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25°C)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25°C
TC=100°C
Power Dissipation (TC=25°C)
- Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
SVS6N80T
110
0.88
Ratings
SVS6N80D
800
±30
6.0
4
24
82
0.66
250
-55+150
-55+150
Packing
Tube
Tube
Tape & Reel
Tube
SVS6N80F
33
0.26
Unit
V
V
A
A
W
W/°C
mJ
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.1
Page 1 of 8
Silan Microelectronics
Silan Microelectronics


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