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SVS6N60D Datasheet

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SVS6N60D_Datasheet
6A, 600V DP MOS POWER TRANSISTOR
DESCRIPTION
SVS6N60D is an N-channel enhancement mode high voltage power
MOSFETs produced using the new platform of Silan’s DP MOS
technology. It achieves low conduction loss and switching losses. It
leads the design engineers to their power converters with high
efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.e., suitable for hard and soft
switching topologies.
FEATURES
6A,600V, RDS(on)(typ.)=0.6@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
ORDERING INFORMATION
Part No.
SVS6N60D
Package
TO-252-2L
Marking
SVS6N60D
Material
Halogen free
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25°C)
Characteristics
Symbol
Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25°C
TC=100°C
Power Dissipation (TC=25°C)
- Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
600
±30
6.0
3.8
17.5
50
0.40
190
-55+150
-55+150
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Ratings
2.5
110
Packing
Tube
Unit
V
V
A
A
W
W/°C
mJ
°C
°C
Unit
°C/W
°C/W
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:0.1
Page 1 of 4
Silan Microelectronics
Silan Microelectronics



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