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SVS4N65D Datasheet

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SVS4N65D datasheet pdf
Silan
Microelectronics
SVS4N65F/MJ/D_Datasheet
4A, 650V DP MOS POWER TRANSISTOR
GENERAL DESCRIPTION
SVS4N65F/MJ/D is an N-channel enhancement mode high voltage
power MOSFETs produced using the new platform of Silan’s DP MOS
technology. It achieves low conduction loss and switching losses. It
leads the design engineers to their power converters with high
efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.e., suitable for hard and soft
switching topologies.
2
1
3
1.Gate 2.Drain 3.Source
1
3
TO-252-2L
FEATURES
4A, 650V, RDS(on)(typ)=0.95@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Extreme dv/dt rated
High peak current capability
123
TO-220F-3L
123
TO-251J-3L
ORDERING INFORMATION
Part No.
SVS4N65F
SVS4N65MJ
SVS4N65D
SVS4N65DTR
Package
TO-220F-3L
TO-251J-3L
TO-252-2L
TO-252-2L
Marking
SVS4N65F
SVS4N65MJ
SVS4N65D
SVS4N65D
Material
Halogen free
Halogen free
Halogen free
Halogen free
Packing
Tube
Tube
Tube
Tape & Reel
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Characteristics
Symbol
SVS4N65F
Ratings
SVS4N65MJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25°C
TC=100°C
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
650
±30
4.0
2.2
12
30 42
0.24 0.34
118
-55+150
-55+150
SVS4N65D
39
0.31
Unit
V
V
A
A
W
W/°C
mJ
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.0
Page 1 of 8
Silan Microelectronics
Silan Microelectronics



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[ SVS4N65D Silan Microelectronics ]     [ SVS4N65F Silan Microelectronics ]     [ SVS4N65MJ Silan Microelectronics ]     [ SVS4N65D Silan Microelectronics ]     [ SVS4N65F Silan Microelectronics ]     [ SVS4N65MJ Silan Microelectronics ]    


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