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SVS47N60PN Datasheet

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SVS47N60PN_Datasheet
47A, 600V DP MOS POWER TRANSISTOR
GENERAL DESCRIPTION
SVS47N60PN is an N-channel enhancement mode high voltage power
MOSFETs produced using the new platform of Silan’s DP MOS
technology. It achieves low conduction loss and switching losses. It
leads the design engineers to their power converters with high
efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.e., suitable for hard and soft
switching topologies.
FEATURES
47A, 600V, RDS(on)(typ)=55m@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
ORDERING INFORMATION
Part No.
SVS47N60PN
Package
TO-3P
Marking
47N60PN
Material
Pb free
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25°C
TC=100°C
Power Dissipation(TC=25C)
-Derate above 25C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
Ratings
600
±30
47
30
140
415
3.32
2103
-55+150
-55+150
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Ratings
0.3
50
Packing
Tube
Unit
V
V
A
A
W
W/C
mJ
C
C
Unit
C/W
C/W
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:0.1
Page 1 of 5
Silan Microelectronics
Silan Microelectronics


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