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SVS11N65K Datasheet

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SVS11N65K datasheet pdf
Silan
Microelectronics
SVS11N65T/F/K_Datasheet
11A, 650V DP MOS POWER TRANSISTOR
DESCRIPTION
SVS11N65T/F/K is an N-channel enhancement mode high voltage
power MOSFETs produced using the new platform of Silan’s DP
MOS technology. It achieves low conduction loss and switching
losses. It leads the design engineers to their power converters with
high efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.e., suitable for hard and soft
switching topologies.
2
11
23
3 TO-262-3L
1.Gate 2.Drain 3.Source
FEATURES
11A,650V, RDS(on)(typ.)=0.37@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
1
23
TO-220F-3L
1
23
TO-220-3L
ORDERING INFORMATION
Part No.
SVS11N65T
SVS11N65F
SVS11N65K
Package
TO-220-3L
TO-220F-3L
TO-262-3L
Marking
SVS11N65T
SVS11N65F
SVS11N65K
Material
Halogen free
Halogen free
Halogen free
Packing
Tube
Tube
Tube
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25°C)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25°C
TC=100°C
Power Dissipation (TC=25°C)
- Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
SVS11N65T
86
0.69
Ratings
SVS11N65F
650
±30
11
6.7
44
23
0.18
250
-55+150
-55+150
SVS11N65K
79
0.63
Unit
V
V
A
A
W
W/°C
mJ
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.2
Page 1 of 8
Silan Microelectronics
Silan Microelectronics



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