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SVF840S Datasheet

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SVF840T/F/D/S_Datasheet
8A, 500V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF840T/F/D/S is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary F-CellTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
8A,500V,RDS(on)typ=0.68Ω@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
ORDERING INFORMATION
Part No.
SVF840T
SVF840F
SVF840D
SVF840DTR
SVF840S
SVF840STR
Package
TO-220-3L
TO-220F-3L
TO-252-2L
TO-252-2L
TO-263-2L
TO-263-2L
Marking
SVF840T
SVF840F
SVF840D
SVF840D
SVF840S
SVF840S
Material
Pb free
Pb free
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
Tape & Reel
Tube
Tape & Reel
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC = 25°C
TC = 100°C
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy(Note 1)
Operation Junction Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
SVF840T
134
1.07
Ratings
SVF840F SVF840D
500
±30
8
5
32
49 130
0.39 1.04
511.6
-55+150
SVF840S
131
1.05
Unit
V
V
A
A
W
W/°C
mJ
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2012.03.07
Page 1 of 9
Silan Microelectronics
Silan Microelectronics



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