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SVF7N80T Datasheet

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SVF7N80F_Datasheet
7A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF7N80F is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
F-CellTM structure VDMOS technology. The improved planar
stripe cell and the improved guard ring terminal have been
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
7A,800V,RDS(on)typ=1.39Ω@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF7N80T
SVF7N80F
Package
TO-220F-3L
TO-220F-3L
Marking
SVF7N80T
SVF7N80F
Material
Pb free
Pb free
Packing
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.05.30
Page 1 of 8
Silan Microelectronics
Silan Microelectronics


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