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SVF7N65MJ Datasheet

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Microelectronics
SVF7N65CF/D/MJ/K/S/FQ/T
_Datasheet
7A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF7N65CF/D/MJ/K/S/FQ/T is an N-channel enhancement mode
power MOS field effect transistor which is produced using Silan
proprietary F-CellTM structure VDMOS technology. The improved
process and cell structure have been especially tailored to minimize
on-state resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
2
11
3
3
1.Gate 2.Drain 3.Source TO-263-2L
12 3
TO-251J-3L
12 3
TO-262-3L
FEATURES
7A, 650V, RDS(on)(typ.)=1.1@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
TO-220F-3L
TO-252-2L
12 3
12 3
TO-220FQ-3L
TO-220-3L
NOMENCLATURE
SVFXNEXXCX
Package information. Example:
F:TO-220F; FQ: TO-220FQ;D:TO-252;
MJ:TO-251J; K:TO-262;
Silan VDMOS Code
S:TO-263;T:TO-220.
of F-Cell process
REV.
Nominal current,using 1 or 2 digits:
Example:4 denotes 4A,
10 denotes 10A,
08 denotes 0.8A
Nominal Voltage,using 2 digits
Example: 60 denotes 600V,
65 denotes 650V.
Special Features indication, May be omitted.
N denotes N Channel
Example: E denotes embeded ESD structure
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.8
Page 1 of 12
Silan Microelectronics
Silan Microelectronics


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