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SVF6N60D Datasheet

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SVF6N60MJ/F/D_Datasheet
6A 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF6N60MJ/F/D is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary F-CellTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
6A,600V,RDS(on(typ)=1.35Ω@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF6N60MJ
SVF6N60F
SVF6N60D
SVF6N60DTR
Package
TO-251J-3L
TO-220F-3L
TO-252-2L
TO-252-2L
Marking
SVF6N60MJ
SVF6N60F
SVF6N60D
SVF6N60D
Material
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
Tape & Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.2
2011.09.09
Page 1 of 9
Silan Microelectronics
Silan Microelectronics



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