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SVF4N90F Datasheet

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SVF4N90F_Datasheet
4A, 900V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF4N90F is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
F-CellTM structure VDMOS technology. The improved planar
stripe cell and the improved guarding ring terminal have been
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
4A,900V,RDS(on)(typ.)=2.7@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF4N90F
Package
TO-220F-3L
Marking
SVF4N90F
Material
Pb free
Packing
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV: 1.1
2012.12.17
Page 1 of 7
Silan Microelectronics
Silan Microelectronics



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