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SVF4N80D Datasheet

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SVF4N80D datasheet pdf
SVF4N80F/D_Datasheet
4A 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF4N80F/D is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
F-CellTM structure VDMOS technology. The improved planar
stripe cell and the improved guard ring terminal have been
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
4A,800V,RDS(on(typ)=3.3Ω@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
Silan VDMOS Code
of F-Cell process
Nominal current,using 1 or 2 digits:
Example:4 denotes 4A,
10 denotes 10A,
08 denotes 0.8A
N denotes N Channel
Package information.
Example: F:TO-220F;
D:TO-252.
Nominal Voltage,using 2 digits
Example: 60 denotes 600V,
65 denotes 650V.
Special Features indication, May be omitted.
Example: E denotes embeded ESD structure
ORDERING INFORMATION
Part No.
SVF4N80F
SVF4N80D
SVF4N80DTR
Package
TO-220F-3L
TO-252-2L
TO-252-2L
Marking
SVF4N80F
SVF4N80D
SVF4N80D
Material
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tape&Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV: 1.0
2011.09.16
Page 1 of 9
Silan Microelectronics
Silan Microelectronics



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