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SVF18N50F Datasheet

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SVF18N50F/T/PN_Datasheet
18A 500V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF18N50F/T/PN is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary F-CellTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
18A,500V,RDS(on(typ)=0.26Ω@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF18N50F
SVF18N50T
SVF18N50PN
Package
TO-220F-3L
TO-220-3L
TO-3PN
Marking
SVF18N50F
SVF18N50T
18N50
Material
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.4
2012.06.04
Page 1 of 9
Silan Microelectronics
Silan Microelectronics



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