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SVF11N90PN Datasheet

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SVF11N90PN_Datasheet
11A, 900V N-CHANNEL MOSFET
DESCRIPTION
SVF11N90PN is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
F-CellTM structure VDMOS technology. The improved planar
stripe cell and the improved guard ring terminal have been
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
11A, 900V, RDS(on) (typ.)=0.82@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF11N90PN
Package
TO-3PN
Marking
11N90
Material
Pb free
Packing
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2012.12.18
Page 1 of 7
Silan Microelectronics
Silan Microelectronics


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