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SVD8N80F Datasheet

MOSFET

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SVD8N80T/F_Datasheet
8A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD8N80T/F is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
S-RinTM structure DMOS technology. The improved planar stripe
cell and the improved guard ring terminal have been especially
tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
8A,800V,RDS(on)typ=1.3Ω@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING SPECIFICATIONS
Part No.
SVD8N80T
SVD8N80F
Package
TO-220-3L
TO-220F-3L
Marking
SVD8N80T
SVD8N80F
Material
Pb free
Pb free
Packing
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.20
Page 1 of 8
Silan Microelectronics
Silan Microelectronics


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