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SVD640T Datasheet

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SVD640T/D/F_Datasheet
18A, 200V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD640T/D/F is an N-channel enhancement mode power MOS field
effect transistor which is produced using Silan proprietary S-RinTM
structure middle/low-voltage VDMOS technology. The improved planar
stripe cell and the improved guard ring terminal have been especially
tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and
commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
18A,200V,RDS(on)(typ.)=0.12@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
ORDERING INFORMATION
Part No.
Package
SVD640T
SVD640D
SVD640DTR
SVD640F
TO-220-3L
TO-252-2L
TO-252-2L
TO-220F-3L
Marking
SVD640T
SVD640D
SVD640D
SVD640F
Material
Pb free
Halogen free
Halogen free
Pb free
Packing
Tube
Tube
Tape & Reel
Tube
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Characteristics
Symbol
SVD640T
Ratings
SVD640D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC=25°C
TC=100°C
Drain Pulsed Current
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
200
±20
18
11
72
150 110
1.2 0.88
635
150
-65+150
SVD640F
35
0.28
Unit
V
V
A
A
W
W/°C
MJ
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.1
Page 1 of 8
Silan Microelectronics
Silan Microelectronics


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