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SVD50N06D Datasheet

MOSFET

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SVD50N06T/D/MJ_Datasheet
50A, 60V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD50N06T is an N-channel enhancement mode high voltage
MOS field effect transistor which is produced using Silan new
structure VDMOS technology. The improved planar stripe cell
and the improved guard ring terminal have been especially
tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode.
It's widely used in electronic ballasts and low power SMPS.
FEATURES
50A,60V,RDS(on)typ=18m@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVD50N06T
SVD50N06D
SVD50N06DTR
SVD50N06MJ
Package
TO-220-3L
TO-252-2L
TO-252-2L
TO-251J-3L
Marking
SVD50N06T
SVD50N06D
SVD50N06D
SVD50N06MJ
Material
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tape & Reel
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2013.01.21
Page 1 of 9
Silan Microelectronics
Silan Microelectronics



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