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SVD3205T Datasheet

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SVD3205T_Datasheet
110A, 55V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD3205T is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
S-RinTM structure VDMOS technology. The improved planar
stripe cell and the improved guard ring terminal have been
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
110A,55V,RDS(on)typ=6.4mΩ@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVD3205T
Package
TO-220-3L
Marking
SVD3205T
Material
Pb free
Packing
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:0.1
2012.03.07
Page 1 of 4
Silan Microelectronics
Silan Microelectronics



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