0.5W High Power Laser Diode
The SLD322XT is a high power, gain-guided laser diode produced
by MOCVD method∗1. Compared to the SLD300 Series, this laser
diode has a high brightness output with a doubled optical density
which can be achived by QW-SCH structure∗2.
Fine adjustment of the oscillation wavelength is possible by controlling
the temperature using the built-in TE cooler (Peltier element).
∗1 MOCVD: Metal Organic Chemical Vapor Deposition
∗2 QW-SCH: Quantum Well Separate Confinement Heterostructure
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• High power
Recommended optical power output: Po = 0.5W
• Low operating current: Iop = 0.75A (Po = 0.5W)
• Flat package with built-in photodiode, TE cooler, and thermistor
• Solid state laser excitation
• Medical use
• Material processes
AlGaAs quantum well structure laser diode
MTTF 10,000H (effective value) at Po = 0.5W, Tth = 25°C
Absolute Maximum Ratings (Tth = 25°C)
• Optical power output
• Reverse voltage
• Operating temperature (Tth) Topr
• Storage temperature
–10 to +30
–40 to +85
This warranty period shall be 90 days after receipt of the product or
1,000 hours operation time whichever is shorter.
Sony Quality Assurance Department shall analyze any product that
fails during said warranty period, and if the analysis results show
that the product failed due to material or manufacturing defects on
the part of Sony, the product shall be replaced free of charge.
Laser diodes naturally have differing lifetimes which follow a Weibull
Special warranties are also available.
Pin Configuration (Top View)
1 TE cooler (negative)
2 Thermistor lead 1
3 Thermistor lead 2
4 Laser diode (anode)
5 Laser diode (cathode)
6 Photodiode (cathode)
7 Photodiode (anode)
8 TE cooler (positive)
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.