qHigh speed, high integration gate array.
qNumber of gates mounted: 2.7K to 44K gates.
The SLA9000F series is a SOG type CMOS gate which has realized high speed, high integration and high
driving capability. This series is offered with 2,784 to 44,070 gates to ensure an optimum application for any mid
size high speed systems.
This series is designed to operate on both 5 V and 3 V systems to correspond to increasing low-voltage oriented
applications. Simplified level shifter cell is available on this series. And, the µA order low noise output cell of the
series has made it suitable for small size, handy equipments and many other applications.
q Super-high density (adopting 1.0µm silicon gate CMOS with 2-metal layer)
q High-speed operation (operation delay of internal gate = 0.3ns at 5.0V, 2-input Power NAND standard)
q Simplified level shifter cells available
q Output drivability (IOL = 100µ, 2, 6, 12, 24 mA when 5.0V, IOL = 100µ, 2, 4, 8, 12mA when 3.3V)
q On-chip RAM available
q Low noise output cells available
s PRODUCT LINEUP
Total BCs (Raw Gates)
Number of PADs
100 128 144 160 184 208
tpd = 0.30ns (standard at 5.0V), tpd = 0.43ns (standard at 3.3V)
tpd = 0.91ns (standard at 5.0V), tpd = 1.08ns (standard at 3.3V)
tpd = 3.5ns (standard at 5.0V), tpd = 4.2ns (standard at 3.3V) CL = 50pF
TTL, CMOS, Pull-up/Pull-down, Schmitt, 3.0/3.3/5.0V Level interface
Normal, Open drain, 3-state, Bi-directional, 3.0/3.3/5.0V Level interface
DataSheet4 U .com