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SIF9N50E Datasheet

N-CHANNEL POWER MOSFET

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SIF9N50E pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
产品规格书
Product Specification
SIF9N50E
●特点:导通电阻低 开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE
RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
●最大额定值(Tc=25°C
Absolute Maximum RatingsTc=25°C
TO-251T/251S/252
参数
PARAMETER
符号
SYMBOL
额定值
VALUE
单位
UNIT
-源电压
Drain-source Voltage
-源电压
gate-source Voltage
漏极电流
VDS
VGS
500
±30
V
V
Continuous Drain Current
TC=25
漏极电流
ID
9A
Continuous Drain Current
TC=100
ID
5.1 A
最大脉冲电流
Drain Current Pulsed
IDM
32 A
VDS=500V
RDS(ON)=0.85Ω
ID=9.0A
耗散功率
Power Dissipation
最高结温
Junction Temperature
存储温度
Storage Temperature
单脉冲雪崩能量
Single Pulse Avalanche Energy
Ptot
Tj
TSTG
EAS
40
150
-55-150
510
W
°C
°C
mJ
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
PARAMETER
符号
SYMBOL
测试条件
TEST CONDITION
最小值
MIN
典型值
TYP
最大值 单位
MAX UNIT
-源击穿电压
Drain-source Breakdown Voltage
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
栅极开启电压
Gate Threshold Voltage
BVDSS
ΔBVDSS/
ΔTj
VGS(TH)
VGS=0V, ID=250µA
ID=1mA, Referenced to
25°C
VGS=VDS, ID=250µA
500
2.0
0.78
V
V/°C
4.0 V
-源漏电流
Drain-source Leakage Current
跨导
Forward Transconductance
IDSS
gfs
VDS =500V,
VGS =0V, Tj=25°C
VDS =400V,
VGS =0V, Tj=125°C
VDS =10V, ID=4.0A
4.0
25 µA
250 µA
S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
TO-252 251S 251T 条管装 TUBE PACKING
TO-252 编带装/TAPE & REEL PACKING
订货编码/ORDERING CODE
普通塑封料
Normal Package Material
SIF9N50E TO-251T-TU
TO-251S-TU TO-252-TU
无卤塑封料
Halogen Free
SIF9N50E TO-251T-TU-HF
TO-251S-TU-HF TO-252-TU-HF
SIF9N50E TO-252-TR
SIF9N50E TO-252-TR-HF
Si semiconductors 2016.04
1
SI Semiconductors
SI Semiconductors



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