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SIF80N060A Datasheet

N-CHANNEL POWER MOSFET

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SIF80N060A pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF80N060A
●特点:热阻低 导通电阻低 栅极电荷低,开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW THERMAL RESISTANCE LOW RDS(ON) TO MINIMIZE CONDUCTIVE LOSS LOW GATE
CHARGE FOR FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT
●应用:低压高频逆变电路 开关应用 同步整流
APPLICATION: LOW VOLTAGE,HIGH FREQUENCY INVERTERS SWITCH APPLICATION
SYNCHRONOUS RECTIFIER
●最大额定值(TC=25°C
Absolute Maximum RatingsTc=25°CTO-220/220FP/262/263
参数
PARAMETER
符号
SYMBOL
额定值
VALUE
单位
UNI
T
-源电压
Drain-source Voltage
VDS 60 V
-源电压
gate-source Voltage
VGS
±20
V
漏极电流
Continuous Drain Current
TC=25
ID
90* A
耗散功率
Total Power Dissipation
最高结温
Junction Temperature
TO-220/262/
Ptot
263140
TO-220FP
W
40
Tj 150 °C
存储温度
Storage Temperature
TSTG
-55-175
°C
单脉冲雪崩能量
Single Pulse Avalanche Energy
EAS
506 mJ
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
PARAMETER
符号
SYMBOL
测试条件
TEST CONDITION
-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
栅极开启电压
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
VDS=60V
RDS(ON)=5.5m
Ω
ID=90A
最小值
MIN
60
典型值
TYP
71
最大值
MAX
单位
UNIT
V
2 2.85 4 V
-源漏电流
Drain-source Leakage Current
栅极漏电流
Gate-body Leakage
Current
-源导通电阻
Static Drain-source On
Resistance
跨导
Forwad Transconductance
IDSS
IGSS
RDS(ON)
gFS
VDS =60V,
VGS =0V, Tj=25°C
VDS =60V,
VGS =0V, Tj=125°C
VGS =±20V ,VDS =0V
VGS =10V, ID=20A
VDS =10V, ID=40A
1
10
±100
µA
µA
nA
5.5 7.0 mΩ
50 S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
TO-220/220FP/262/263
条管装/TUBE PACKING
TO-263 编带装/TAPE & REEL PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material
SIF80N060A
TO-220/220FP/262/263-TU
无卤塑封料/Halogen Free
SIF80N060A
TO-220/220FP/262/263-TU-HF
SIF80N060A TO-263-TR
SIF80N060A TO-263-TR-HF
Si semiconductors 2015.7
1
SI Semiconductors
SI Semiconductors



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