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SIF7N65D Datasheet

N-CHANNEL POWER MOSFET

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SIF7N65D pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF7N65D
●特点:热阻低 开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE
RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
●最大额定值(TC=25°C
Absolute Maximum RatingsTc=25°C
参数
符号
PARAMETER
SYMBOL
TO-220FP/262/263
额定值
单位
VALUE
UNIT
-源电压
Drain-source Voltage
VDS
650 V
-源电压
gate-source Voltage
VGS
±30
V
漏极电流
Continuous Drain Current
TC=25
漏极电流
Continuous Drain Current
TC=100
ID
ID
7.0* A
3.2* A
最大脉冲电流
Drain Current Pulsed
IDM
28* A
耗散功率
Power Dissipation
TO-220FP40
Ptot
W
TO-262/263:142
最高结温
Junction Temperature
Tj
150 °C
存储温度
Storage Temperature
TSTG
-55-150
°C
单脉冲雪崩能量
Single Pulse Avalanche Energy
EAS
230 mJ
VDS=650V
RDS(ON)=1.4Ω
ID=7.0A
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
符号
测试条件
PARAMETER
SYMBOL
TEST CONDITION
-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/
ΔTj
ID=250uA, Referenced to
25°C
栅极开启电压
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
-源漏电流
Drain-source Leakage Current
跨导
Forward Transconductance
IDSS
gfs
VDS =650V,
VGS =0V, Tj=25°C
VDS =520V,
VGS =0V, Tj=125°C
VDS =40V, ID=3.5A
最小值
MIN
650
2.0
典型值
TYP
0.8
3.0
最大值
MAX
单位
UNIT
V
V/°C
4.0 V
1 µA
10 µA
S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material 无卤塑封料/Halogen Free
TO-220FP 条管装/TUBE PACKING
TO-262 263 条管装/TUBE PACKING
TO-263 编带装/TAPE & REEL PACKING
SIF7N65D TO-220FP-TU
SIF7N65D TO-262-TU
SIF7N65D TO-263-TU
SIF7N65D TO-263-TR
SIF7N65D TO-220FP-TU-HF
SIF7N65DTO-262-TU-HF
SIF7N65D TO-263-TU-HF
SIF7N65D TO-263-TR-HF
Si semiconductors 2015.4
1
SI Semiconductors
SI Semiconductors



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