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SIF70N100 Datasheet

N-CHANNEL POWER MOSFET

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SIF70N100 pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF70N100
●特点:热阻低 导通电阻低 栅极电荷低,开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW THERMAL RESISTANCE LOW RDS(ON) TO MINIMIZE CONDUCTIVE LOSS LOW GATE
CHARGE FOR FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT
●应用:低压高频逆变电路 同步整流 开关
APPLICATION: LOW VOLTAGE,HIGH FREQUENCY INVERTERS SYNCHRONOUS RECTIFIER
PRIMARY SWITCH
●最大额定值(TC=25°C
Absolute Maximum RatingsTc=25°CTO-220/220FP
参数
符号
额定值
单位
PARAMETER
SYMBOL VALUE UNIT
-源电压
Drain-source Voltage
VDS 100
V
-源电压
gate-source Voltage
VGS ±20
V
漏极电流
Continuous Drain Current
ID 70
A
TC=25
耗散功率
Total Power Dissipation
TO-220
Ptot
120
TO-220
FP:40
W
最高结温
Junction Temperature
Tj 150 °C
存储温度
Storage Temperature
TSTG
-55-175
°C
单脉冲雪崩能量
Single Pulse Avalanche Energy
EAS 600
mJ
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
PARAMETER
符号
SYMBOL
测试条件
TEST CONDITION
-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
栅极开启电压
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
-源漏电流
Drain-source Leakage Current
IDSS
VDS =100V,VGS =0V,
栅极漏电流
Gate-body Leakage
Current
-源导通电阻
Static Drain-source On
Resistance
IGSS
RDS(ON)
VGS =±20V ,VDS =0V
VGS =10V, ID=20A
跨导
Forwad Transconductance
gFS
VDS =50V, ID=20A
VDS=100V
RDS(ON)<13mΩ
ID=70A
最小值
MIN
100
典型值
TYP
110
最大值
MAX
单位
UNIT
V
1.4 3 V
1 µA
±100
nA
9.9 13 mΩ
100 S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material
无卤塑封料/Halogen Free
TO-220(FP)条管装/TUBE PACKING
SIF70N100 TO-220-TU
TO-220FP-TU
SIF70N100 TO-220-TU-HF
TO-220FP-TU-HF
Si semiconductors 2015.9
1
SI Semiconductors
SI Semiconductors



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