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SIF6N40D Datasheet

N-CHANNEL POWER MOSFET

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SIF6N40D pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF6N40D
●特点:导通电阻低 开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE
RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
●最大额定值(TC=25°C
Absolute Maximum RatingsTc=25°C
参数
PARAMETER
-源电压
Drain-source Voltage
-源电压
gate-source Voltage
漏极电流
Continuous Drain Current
TC=25
漏极电流
Continuous Drain Current
TC=100
最大脉冲电流
Drain Current Pulsed
耗散功率
Power Dissipation
最高结温
Junction Temperature
存储温度
Storage Temperature
单脉冲雪崩能量
Single Pulse Avalanche Energy
符号
SYMBOL
VDS
VGS
ID
ID
IDM
PD
Tj
TSTG
EAS
额定值
VALUE
400
±30
6.0*
3.6*
24*
TO-220:74
TO-220FP:40
150
-55-150
225
TO-220/220FP
单位
UNIT
V
V
A
A
A
W
°C
°C
mJ
VDS=400V
RDS(ON)=1.0Ω
ID=5.0A
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
PARAMETER
-源击穿电压
Drain-source Breakdown Voltage
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
栅极开启电压
Gate Threshold Voltage
符号
SYMBOL
BVDSS
ΔBVDSS/
ΔTj
VGS(TH)
-源漏电流
Drain-source Leakage Current
IDSS
跨导
Forward Transconductance
gfs
测试条件
TEST CONDITION
VGS=0V, ID=250µA
ID=1mA, Referenced to
25°C
VGS=VDS, ID=250µA
VDS =400V,
VGS =0V, Tj=25°C
VDS =320V,
VGS =0V, Tj=125°C
VDS =50, ID=2.5A
●订单信息/ORDERING INFORMATION:
最小值
MIN
400
典型值
TYP
最大值
MAX
单位
UNIT
V
0.54 V/°C
2.0 4.0 V
25 µA
250 µA
2.4 S
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material 无卤塑封料/Halogen Free
TO-220 条管装/TUBE PACKING
SIF6N40D TO-220-TU
SIF6N40D TO-220-TU-HF
TO-220FP 条管装/TUBE PACKING
SIF6N40D TO-220FP-TU
SIF6N40 D TO-220FP-TU-HF
Si semiconductors 2016.3
1
SI Semiconductors
SI Semiconductors



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