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SIF5N60E Datasheet

N-CHANNEL POWER MOSFET

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SIF5N60E pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF5N60E
●特点:热阻低 开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE
RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
●最大额定值(TC=25°C
Absolute Maximum RatingsTc=25°C
参数
PARAMETER
符号
SYMBOL
-源电压
Drain-source Voltage
-源电压
gate-source Voltage
漏极电流
Continuous Drain Current
TC=25
漏极电流
Continuous Drain Current
TC=100
最大脉冲电流
Drain Current Pulsed
VDS
VGS
ID
ID
IDM
耗散功率
Power Dissipation
最高结温
Junction Temperature
存储温度
Storage Temperature
Ptot
Tj
TSTG
单脉冲雪崩能量
Single Pulse Avalanche Energy
EAS
TO-251T/251S/252
额定值
VALUE
单位
UNIT
600 V
±30
V
5.0 A
2.2
20
40
150
-55-150
230
A
A
W
°C
°C
mJ
VDS=600V
RDS(ON)=2.0Ω
ID=5.0A
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
PARAMETER
符号
SYMBOL
测试条件
TEST CONDITION
最小值
MIN
典型值
TYP
最大值 单位
MAX UNIT
-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
600
V
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
栅极开启电压
Gate Threshold Voltage
ΔBVDSS/
ΔTj
VGS(TH)
-源漏电流
Drain-source Leakage Current
IDSS
跨导
Forward Transconductance
gfs
ID=250uA, Referenced to
25°C
VGS=VDS, ID=250µA
VDS =600V,
VGS =0V, Tj=25°C
VDS =480V,
VGS =0V, Tj=125°C
VDS =40V, ID=2.5A
2.0
0.65
3.0
V/°C
4.0 V
1 µA
10 µA
S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
TO-252 251T 251S 条管装/TUBE PACKING
订货编码/ORDERING CODE
普通塑封料
Normal Package Material
无卤塑封料
Halogen Free
SIF5N60E TO-251T-TU
SIF5N60E TO-251T-TU-HF
TO-251S-TU TO-252-TU TO-251S-TU-HF TO-252-TU-HF
TO-252 编带装/TAPE & REEL PACKING
SIF5N60E TO-252-TR
SIF5N60E TO-252-TR-HF
Si semiconductors 2016.3
1
SI Semiconductors
SI Semiconductors



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