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SIF5N40D Datasheet

N-CHANNEL POWER MOSFET

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SIF5N40D pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF5N40D
●特点:导通电阻低 开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE
RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
●最大额定值(TC=25°C
Absolute Maximum RatingsTc=25°C
参数
PARAMETER
-源电压
Drain-source Voltage
-源电压
gate-source Voltage
漏极电流
Continuous Drain Current
TC=25
漏极电流
Continuous Drain Current
TC=100
最大脉冲电流
Drain Current Pulsed
耗散功率
Power Dissipation
最高结温
Junction Temperature
存储温度
Storage Temperature
单脉冲雪崩能量
Single Pulse Avalanche Energy
*漏极电流由最高结温限制
符号
SYMBOL
VDS
VGS
ID
ID
IDM
PD
Tj
TSTG
EAS
额定值
VALUE
400
±30
5.0*
3.0*
20*
TO-220:74
TO-220FP:40
150
-55-150
225
TO-220/220FP
单位
UNIT
V
V
A
A
A
W
°C
°C
mJ
VDS=400V
RDS(ON)=1.0Ω
ID=5.0A
*Drain current limited by maximum junction temperature
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
PARAMETER
-源击穿电压
Drain-source Breakdown Voltage
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
栅极开启电压
Gate Threshold Voltage
符号
SYMBOL
BVDSS
ΔBVDSS/
ΔTj
VGS(TH)
-源漏电流
Drain-source Leakage Current
IDSS
跨导
Forward Transconductance
gfs
●订单信息/ORDERING INFORMATION:
测试条件
TEST CONDITION
VGS=0V, ID=250µA
ID=1mA, Referenced to
25°C
VGS=VDS, ID=250µA
VDS =400V,
VGS =0V, Tj=25°C
VDS =320V,
VGS =0V, Tj=125°C
VDS =50, ID=2.5A
最小值
MIN
400
典型值
TYP
最大值
MAX
单位
UNIT
V
0.54 V/°C
2.0 4.0 V
25 µA
250 µA
2.4 S
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material 无卤塑封料/Halogen Free
TO-220 条管装/TUBE PACKING
SIF5N40D TO-220-TU
SIF5N40D TO-220-TU-HF
TO-220FP 条管装/TUBE PACKING
SIF5N40D TO-220FP-TU
SIF5N40 D TO-220FP-TU-HF
Si semiconductors 2014.4
1
SI Semiconductors
SI Semiconductors



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