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SIF4N60D Datasheet

N-CHANNEL POWER MOSFET

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SIF4N60D pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF4N60D
●特点:导通电阻低 开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
APPLICATION: ELECTRONIC BALLASTELECTRONIC TRANSFORMERSWITCH MODE POWER SUPPLY
●最大额定值(Tc=25°C
Absolute Maximum RatingsTc=25°C
参数
PARAMETER
符号
SYMBOL
-源电压
Drain-source Voltage
-源电压
gate-source Voltage
漏极电流
Continuous Drain Current
TC=25
漏极电流
Continuous Drain Current
TC=100
VDS
VGS
ID
ID
TO-220/220FP/262/263
额定值
单位
VALUE
UNIT
600 V
±30
V
4.0 A
2.5 A
最大脉冲电流
Drain Current Pulsed
IDM
16 A
耗散功率
Power Dissipation
最高结温
Junction Temperature
存储温度
Storage Temperature
单脉冲雪崩能量
Single Pulse Avalanche Energy
Ptot
Tj
TSTG
EAS
TO-220:104
TO-220FP:36
TO-262/263:104
150
-55-150
128
W
°C
°C
mJ
VDS=600V
RDS(ON)=2.5Ω
ID=4.0A
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
PARAMETER
-源击穿电压
Drain-source Breakdown Voltage
符号
SYMBOL
BVDSS
测试条件
TEST CONDITION
VGS=0V, ID=250µA
最小值
MIN
600
典型值
TYP
最大值
MAX
单位
UNIT
V
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/
ΔTj
ID=250uA, Referenced to
25°C
0.6 V/°C
栅极开启电压
Gate Threshold Voltage
-源漏电流
Drain-source Leakage Current
跨导
Forward Transconductance
VGS(TH)
IDSS
gfs
VGS=VDS, ID=250µA
VDS =600V,
VGS =0V, Tj=25°C
VDS =480V,
VGS =0V, Tj=125°C
VDS =40V, ID=2.0A
2.0 4.0 V
25 µA
250 µA
2.5 S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
TO-220 条管装/TUBE PACKING
TO-220FP 条管装/TUBE PACKING
TO-262 263 条管装/TUBE PACKING
TO-263 编带装/TAPE & REEL PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material 无卤塑封料/Halogen Free
SIF4N60D TO-220-TU
SIF4N60D TO-220-TU-HF
SIF4N60D TO-220FP-TU
SIF4N60D TO-262-TU
SIF4N60D TO-263-TU
SIF4N60D TO-263-TR
SIF4N60D TO-220FP-TU-HF
SIF4N60D TO-262-TU-HF
SIF4N60D TO-263-TU-HF
SIF4N60D TO-263-TR-HF
Si semiconductors 2013.7
1
SI Semiconductors
SI Semiconductors



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