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SIF2N65D Datasheet

N-CHANNEL POWER MOSFET

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SIF2N65D pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF2N65D
●特点:热阻低 开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE
RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
●最大额定值(TC=25°C
Absolute Maximum RatingsTc=25°C
参数
PARAMETER
符号
SYMBOL
额定值
VALUE
-源电压
Drain-source Voltage
-源电压
gate-source Voltage
漏极电流
Continuous Drain Current
TC=25
漏极电流
Continuous Drain Current
TC=100
VDS
VGS
ID
ID
650
±30
2.0
1.25
最大脉冲电流
Drain Current Pulsed
IDM
8.0
TO-220/220FP
单位
UNIT
V
V
A
A
A
VDS=600V
RDS(ON)=5.0Ω
ID=2.0A
耗散功率
Power Dissipation
最高结温
Junction Temperature
存储温度
Storage Temperature
单脉冲雪崩能量
Single Pulse Avalanche Energy
Ptot
Tj
TSTG
EAS
TO-220:54
TO-220FP:28
150
-55-150
120
W
°C
°C
mJ
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
PARAMETER
符号
SYMBOL
测试条件
TEST CONDITION
-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/
ΔTj
ID=250uA, Referenced to
25°C
栅极开启电压
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
最小值
MIN
650
2.0
典型值
TYP
0.6
最大值
MAX
单位
UNIT
V
V/°C
4.0 V
-源漏电流
Drain-source Leakage Current
IDSS
VDS =650V,
VGS =0V, Tj=25°C
VDS =520V,
VGS =0V, Tj=125°C
25 µA
250 µA
跨导
Forward Transconductance
gfs
VDS =40V, ID=1.0A
1.5 S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material 无卤塑封料/Halogen Free
TO-220 条管装/TUBE PACKING
SIF2N65D TO-220-TU
SIF2N65D TO-220-TU-HF
TO-220FP 条管装/TUBE PACKING
SIF2N65D TO-220FP-TU
SIF2N65D TO-220FP-TU-HF
Si semiconductors 2013.7
1
SI Semiconductors
SI Semiconductors



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