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SIF2N60D Datasheet

N-CHANNEL POWER MOSFET

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SIF2N60D pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF2N60D
●特点:导通电阻低 开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
APPLICATION: ELECTRONIC BALLASTELECTRONIC TRANSFORMERSWITCH MODE POWER SUPPLY
●最大额定值(Tc=25°C
Absolute Maximum RatingsTc=25°CTO-251/251S/252
参数
符号
额定值
单位
PARAMETER
SYMBOL VALUE UNIT
-源电压
Drain-source Voltage
VDS 600
V
-源电压
gate-source Voltage
VGS ±30
V
漏极电流
Continuous Drain Current
TC=25
ID 2.0* A
漏极电流
Continuous Drain Current
TC=100
ID 1.25* A
VDS=600V
RDS(ON)=4.5Ω
ID=2.0A
最大脉冲电流
Drain Current Pulsed
IDM 8.0*
A
耗散功率
Power Dissipation
最高结温
Junction Temperature
存储温度
Storage Temperature
单脉冲雪崩能量
Single Pulse Avalanche Energy
Ptot
Tj
TSTG
EAS
44
150
-55-150
120
W
°C
°C
mJ
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
符号
测试条件
PARAMETER
SYMBOL
TEST CONDITION
-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
最小值
MIN
600
典型值
TYP
最大值
MAX
单位
UNIT
V
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/
ΔTj
ID=250uA, Referenced to
25°C
0.6
V/°C
栅极开启电压
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
2.0
4.0 V
-源漏电流
Drain-source Leakage Current
IDSS
VDS =600V,
VGS =0V, Tj=25°C
VDS =480V,
VGS =0V, Tj=125°C
25 µA
250 µA
跨导
Forward Transconductance
gfs
VDS =40V, ID=1A
1.5 S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
TO-252 251 251S 条管装/TUBE PACKING
TO-252 编带装/TAPE & REEL PACKING
订货编码/ORDERING CODE
普通塑封料
无卤塑封料
Normal Package Material
Halogen Free
SIF2N60D TO-251-TU
SIF2N60D TO-251-TU-HF
TO-251S-TU TO-252-TU TO-251S-TU TO-252-TU-HF
SIF2N60D TO-252-TR
SIF2N60D TO-252-TR-HF
Si semiconductors 2013.7
1
SI Semiconductors
SI Semiconductors



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