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SIF24P020 Datasheet

P-CHANNEL POWER MOSFET

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SIF24P020 pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
P-沟道功率 MOS / P-CHANNEL POWER MOSFET
SIF24P020
●特点:热阻低 导通电阻低 栅极电荷低,开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW THERMAL RESISTANCE LOW RDS(ON) TO MINIMIZE CONDUCTIVE LOSS LOW GATE
CHARGE FOR FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT
●应用:负载开关 电池保护
APPLICATION: LOAD SWITCH BATTERY PROTECTION
●最大额定值(TC=25°C
Absolute Maximum RatingsTc=25°C
参数
符号 额定值
PARAMETER
SYMBOL VALUE
单位
UNIT
SOP-8
-源电压
Drain-source Voltage
VDS -20
V
-源电压
gate-source Voltage
VGS ±10
V
漏极电流
Continuous Drain Current
ID -24* A
TC=25
耗散功率
Total Power Dissipation Ptot 2.6*
W
最高结温
Junction Temperature
Tj 150 °C
存储温度
Storage Temperature
TSTG
-55-150
°C
单脉冲雪崩能量
Single Pulse Avalanche Energy EAS 88
mJ
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
PARAMETER
-源击穿电压
Drain-source Breakdown Voltage
栅极开启电压
Gate Threshold Voltage
符号
SYMBOL
BVDSS
VGS(TH)
测试条件
TEST CONDITION
VGS=0V, ID=-250µA
VGS=VDS, ID=-250µA
最小值
MIN
-20
典型值
TYP
最大值
MAX
单位
UNIT
V
-0.4 -0.6 -1.0 V
-源漏电流
Drain-source Leakage Current
栅极漏电流
Gate-body Leakage
Current
IDSS
IGSS
VDS =-20V,
VGS =0V, Tj=25°C
VDS =-20V,
VGS =0V, Tj=125°C
VGS =±10V ,VDS =0V
1 µA
10 µA
±100
nA
-源导通电阻
Static Drain-source On
Resistance
RDS(ON)
VGS =-4.5V, ID=-20A
VGS =-2.5V, ID=-20A
VGS =-1.8V, ID=-20A
4.3 5 mΩ
4.8 6 mΩ
5.8 10 mΩ
跨导
Forwad Transconductance
gFS
●订单信息/ORDERING INFORMATION:
VDS =-5V, ID=-20A
100
S
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material 无卤塑封料/Halogen Free
SOP-8 条管装/TUBE PACKING
SIF24P020 SOP-8-TU
SIF24P020 SOP-8-TU-HF
SOP-8 编带装/TAPE & REEL PACKING
SIF24P020 SOP-8-TR
SIF24P020 SOP-8-TR-HF
Si semiconductors 2015.12
1
SI Semiconductors
SI Semiconductors



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