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SIF1N65C Datasheet

N-CHANNEL POWER MOSFET

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SIF1N65C pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF1N65C
●特点:导通电阻低 开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
●最大额定值(TC=25°C
Absolute Maximum RatingsTc=25°C
TO-92/251/251S/252
参数
PARAMETER
-源电压
Drain-source Voltage
-源电压
gate-source Voltage
漏极电流
Continuous Drain Current
TC=25
漏极电流
Continuous Drain Current
TC=100
符号
SYMBOL
VDS
VGS
ID
ID
额定值
VALUE
650
±30
1.0*
0.6*
单位
UNIT
V
V
A
A
VDS=650V
RDS(ON)=17Ω
ID=1.0A
最大脉冲电流
Drain Current Pulsed
IDM
4.0* A
耗散功率
Power Dissipation (TL=25°C)
TO-92:3
Ptot W
TO-251/251S/252:28
最高结温
Junction Temperature
Tj
150 °C
存储温度
Storage Temperature
TSTG
-55-150
°C
单脉冲雪崩能量
Single Pulse Avalanche Energy
EAS
14 mJ
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
符号
测试条件
PARAMETER
SYMBOL
TEST CONDITION
-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/
ΔTj
ID=250uA, Referenced to
25°C
栅极开启电压
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
-源漏电流
Drain-source Leakage Current
IDSS
VDS =650V,
VGS =0V, Tj=25°C
VDS =520V,
VGS =0V, Tj=125°C
跨导
Forward Transconductance
gfs
VDS =40V, ID=0.5A
最小值
MIN
650
2.0
0.5
典型值
TYP
0.6
最大值
MAX
单位
UNIT
V
V/°C
4.0 V
25 µA
250 µA
S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
TO-92 盒式编带/AMMOPACK
TO-252 251 251S 条管装/TUBE PACKING
TO-252 编带装/TAPE & REEL PACKING
订货编码/ORDERING CODE
普通塑封料
Nomal Package Material
无卤塑封料/Halogen Free
SIF1N65C TO-92-AP
SIF1N65C TO-92-AP-HF
SIF1N65C TO-251-TU
TO-251S-TU TO-252-TU
SIF1N65C TO-251-TU-HF
TO-251S-TU-HF TO-252-TU-HF
SIF1N65C TO-252-TR
SIF1N65C TO-252-TR-HF
Si semiconductors 2013.12
1
SI Semiconductors
SI Semiconductors



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