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SIF1N60EA Datasheet

N-CHANNEL POWER MOSFET

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SIF1N60EA pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF1N60EA
●特点:导通电阻低 开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
●最大额定值(TC=25°C
Absolute Maximum RatingsTc=25°C
TO-92/251T/251S/252
参数
PARAMETER
符号
SYMBOL
额定值
VALUE
单位
UNIT
VDS=600V
-源电压
Drain-source Voltage
VDS
600 V
RDS(ON)=11Ω
-源电压
gate-source Voltage
漏极电流
Continuous Drain Current
TC=25
VGS
ID
±30
1.0*
V
A
ID=1.0A
漏极电流
Continuous Drain Current
TC=100
ID
0.6* A
最大脉冲电流
Drain Current Pulsed
IDM
4.0* A
耗散功率
Power Dissipation (TL=25°C)
PD
TO-92:3
TO-251T/251S/252/126:28
W
最高结温
Junction Temperature
Tj
150 °C
存储温度
Storage Temperature
TSTG
-55-150
°C
单脉冲雪崩能量
Single Pulse Avalanche
Energy
EAS
14 mJ
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
符号
PARAMETER
SYMBOL
测试条件
TEST CONDITION
-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/
ΔTj
ID=250uA, Referenced to
25°C
栅极开启电压
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
-源漏电流
Drain-source Leakage Current
跨导
Forward Transconductance
VDS =600V,
IDSS
VGS =0V, Tj=25°C
VDS =480V,
VGS =0V, Tj=125°C
gfs VDS =40V, ID=0.5A
●订单信息/ORDERING INFORMATION:
最小值
MIN
600
2.0
0.5
典型值
TYP
0.6
最大值
MAX
4.0
25
250
单位
UNIT
V
V/°C
V
µA
µA
S
包装形式/PACKING
TO-92 盒式编带/AMMOPACK
TO-252 251T 251S 条管装/TUBE PACKING
TO-252 编带装/TAPE & REEL PACKING
订货编码/ORDERING CODE
普通塑封料
Nomal Package Material
无卤塑封料
Halogen Free
SIF1N60EA TO-92-AP
SIF1N60EA TO-251T-TU
TO-251S-TU TO-252-TU
SIF1N60EA TO-92-AP-HF
SIF1N60EA TO-251T-TU-HF
TO-251S-TU-HF TO-252-TU-HF
SIF1N60EA TO-252-TR
SIF1N60EA TO-252-TR-HF
Si semiconductors 2016.03
1
SI Semiconductors
SI Semiconductors



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