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SIF18N50C Datasheet

N-CHANNEL POWER MOSFET

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SIF18N50C pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF18N50C
●特点:热阻低 开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE
RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
●最大额定值(TC=25°C
Absolute Maximum RatingsTc=25°C
TO-220FP
参数
符号
额定值
单位
PARAMETER
SYMBOL VALUE UNIT
-源电压
Drain-source Voltage
VDS 500
V
-源电压
gate-source Voltage
VGS ±30
V
漏极电流
VDS=500V
RDS(ON)=0.28Ω
ID=18A
Continuous Drain Current
TC=25
ID 18*
A
漏极电流
Continuous Drain Current
TC=100
ID 11*
A
最大脉冲电流
Drain Current Pulsed
IDM 72*
A
耗散功率
Power Dissipation
PD 65
W
最高结温
Junction Temperature
Tj 150 °C
存储温度
Storage Temperature
TSTG
-55-150
°C
单脉冲雪崩能量
Single Pulse Avalanche Energy
EAS
1000
mJ
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
PARAMETER
符号
SYMBOL
测试条件
TEST CONDITION
最小值
MIN
典型值
TYP
最大值 单位
MAX UNIT
-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
500
V
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/
ΔTj
ID=250uA, Referenced to
25°C
0.6
V/°C
栅极开启电压
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
3.0
5.0 V
-源漏电流
Drain-source Leakage Current
IDSS
VDS =500V,
VGS =0V, Tj=25°C
VDS =400V,
VGS =0V, Tj=125°C
1 µA
10 µA
跨导
Forward Transconductance
gfs
VDS =40V, ID=9.0A
11 S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material 无卤塑封料/Halogen Free
TO-220FP 条管装/TUBE PACKING
SIF18N50C TO-220FP-TU
SIF18N50C TO-220FP-TU-HF
Si semiconductors 2015.6
1
SI Semiconductors
SI Semiconductors



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