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SIF120N040 Datasheet

N-CHANNEL POWER MOSFET

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SIF120N040 pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF120N040
●特点:热阻低 导通电阻低 栅极电荷低,开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW THERMAL RESISTANCE LOW RDS(ON) TO MINIMIZE CONDUCTIVE LOSS LOW GATE
CHARGE FOR FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT
●应用:低压高频逆变电路 同步整流 开关应用
APPLICATION: LOW VOLTAGE,HIGH FREQUENCY INVERTERS SYNCHRONOUS RECTIFICATION
SWITCH APPLICATIONS
●最大额定值(TC=25°C
Absolute Maximum RatingsTc=25°CTO-220/220FP/262/263
参数
PARAMETER
-源电压
Drain-source Voltage
符号
SYMBO
L
VDS
额定值
VALUE
40
单位
UNIT
V
-源电压
gate-source Voltage
VGS ±20
V
漏极电流
Continuous Drain Current
TC=25
ID
120*
A
TO-220/2
耗散功率
Total Power Dissipation
Ptot
62/263:
120
TO-220F
P:40
W
最高结温
Junction Temperature
Tj 150
°C
存储温度
Storage Temperature
TSTG
-55-175
°C
单脉冲雪崩能量
Single Pulse Avalanche Energy EAS 1080
mJ
VDS=40V
RDS(ON)=3.2mΩ
ID=120A
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
PARAMETER
符号
SYMBOL
测试条件
TEST CONDITION
最小值
MIN
典型值
TYP
最大值 单位
MAX UNIT
-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
40 45
V
栅极开启电压
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
1.2
1.9
2.5 V
-源漏电流
Drain-source Leakage Current
IDSS
VDS =40V,VGS =0V
Tc=25
1 µA
栅极漏电流
Gate-body Leakage
Current (VDS = 0)
-源导通电阻
Static Drain-source On
Resistance
IGSS
RDS(ON)
VGS =±20V
VGS =10V, ID=20A
±100
nA
3.2 4.5 mΩ
跨导
Forwad Transconductance
gFS
VDS =10V, ID=20A
26
S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
TO-220/220FP/262/263
条管装/TUBE PACKING
TO-263 编带装/TAPE & REEL PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material
SIF120N040
TO-220/220FP/262/263-TU
无卤塑封料/Halogen Free
SIF120N040
TO-220/220FP/262/263-TU-HF
SIF120N040 TO-263-TR
SIF120N040 TO-263-TR-HF
Si semiconductors 2015.7
1
SI Semiconductors
SI Semiconductors



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