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SIF110N60 Datasheet

N-CHANNEL POWER MOSFET

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SIF110N60 pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF110N060
●特点:热阻低 导通电阻低 栅极电荷低,开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW THERMAL RESISTANCE LOW RDS(ON) TO MINIMIZE CONDUCTIVE LOSS LOW GATE
CHARGE FOR FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT
●应用:低压高频逆变电路 续流电流 保护电流
APPLICATION: LOW VOLTAGE,HIGH FREQUENCY INVERTERS FREE WHEELING
POLARITY PROTECTION APPLICATIONS
●最大额定值(TC=25°C
Absolute Maximum RatingsTc=25°C
参数
PARAMETER
符号 额定值
SYMBOL VALUE
-源电压
Drain-source Voltage
-源电压
gate-source Voltage
漏极电流
Continuous Drain Current
TC=25
耗散功率
Total Power Dissipation
VDS
VGS
ID
Ptot
60
±20
110*
150*
最高结温
Junction Temperature
存储温度
Storage Temperature
Tj
TSTG
150
-55-175
单脉冲雪崩能量
Single Pulse Avalanche Energy
EAS 400
TO-220
单位
UNIT
V
V
A
W
°C
°C
mJ
VDS=60V
RDS(ON)=8mΩ
ID=110A
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
PARAMETER
符号
SYMBOL
测试条件
TEST CONDITION
最小值
MIN
典型值
TYP
最大值 单位
MAX UNIT
-源击穿电压
Drain-source Breakdown Voltage
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
栅极开启电压
Gate Threshold Voltage
BVDSS
ΔBVDSS/
ΔTj
VGS(TH)
VGS=0V, ID=250µA
ID=250uA, Referenced to
25°C
VGS=VDS, ID=250µA
60
0.7
2.0
V
V/°C
4.0 V
-源漏电流
Drain-source Leakage Current
IDSS
VDS =60V,
VGS =0V, Tj=25°C
VDS =48V,
VGS =0V, Tj=125°C
1 µA
10 µA
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
TO-220 条管装/TUBE PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material 无卤塑封料/Halogen Free
SIF110N060 TO-220-TU
SIF110N060 TO-220-TU-HF
Si semiconductors 2013.5
1
SI Semiconductors
SI Semiconductors



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