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SIF10N70C Datasheet

N-CHANNEL POWER MOSFET

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SIF10N70C pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF10N70C
●特点:热阻低 开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE
RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
●最大额定值(TC=25°C
Absolute Maximum RatingsTc=25°C
参数
符号
额定值
PARAMETER
SYMBOL
VALUE
-源电压
Drain-source Voltage
VDS
700
TO-220/220FP
单位
UNIT
V
VDS=700V
-源电压
gate-source Voltage
漏极电流
Continuous Drain Current
TC=25
漏极电流
Continuous Drain Current
TC=100
最大脉冲电流
Drain Current Pulsed
耗散功率
Power Dissipation
最高结温
Junction Temperature
存储温度
Storage Temperature
单脉冲雪崩能量
Single Pulse Avalanche Energy
●电特性(Tc=25°C
VGS
ID
ID
IDM
Ptot
Tj
TSTG
EAS
±20
10
V
A
6.0
40
TO-220:156
TO-220FP:50
150
-55-150
A
A
W
°C
°C
500 mJ
RDS(ON)=1.2Ω
ID=10A
Electronic CharacteristicsTc=25°C
参数
符号
PARAMETER
SYMBOL
测试条件
TEST CONDITION
最小值
MIN
典型值
TYP
最大值 单位
MAX UNIT
-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
700
V
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/
ΔTj
ID=250uA, Referenced to
25°C
0.65
V/°C
栅极开启电压
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
2.0
4.0 V
-源漏电流
Drain-source Leakage Current
跨导
Forward Transconductance
IDSS
gfs
VDS =700V,
VGS =0V, Tj=25°C
VDS =520V,
VGS =0V, Tj=125°C
VDS =40V, ID=5.0A
1 µA
10 µA
8S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material
无卤塑封料/Halogen Free
TO-220 条管装/TUBE PACKING
SIF10N70C TO-220-TU
SIF10N70C TO-220-TU-HF
TO-220FP 条管装/TUBE PACKING
SIF10N70C TO-220FP-TU
SIF10N70C TO-220FP-TU-HF
Si semiconductors 2013.5
1
SI Semiconductors
SI Semiconductors



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