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SIF10N65C Datasheet

N-CHANNEL POWER MOSFET

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SIF10N65C pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF10N65C
●特点:热阻低 开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE
RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
●最大额定值(TC=25°C
Absolute Maximum RatingsTc=25°C
TO-220/220FP/262/263
参数
符号
额定值
单位
PARAMETER
-源电压
Drain-source Voltage
-源电压
gate-source Voltage
漏极电流
SYMBOL
VDS
VGS
VALUE
650
±20
UNIT
V
V
VDS=650V
RDS(ON)=0.9Ω
ID=10A
Continuous Drain Current
TC=25
ID
10 A
漏极电流
Continuous Drain Current
TC=100
ID
6A
最大脉冲电流
Drain Current Pulsed
IDM
40 A
耗散功率
Power Dissipation
TO-220:156
Ptot
TO-220FP:50
W
TO-262/263:126
最高结温
Junction Temperature
Tj
150 °C
存储温度
Storage Temperature
TSTG
-55-150
°C
单脉冲雪崩能量
Single Pulse Avalanche Energy
EAS
500 mJ
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
PARAMETER
符号
SYMBOL
测试条件
TEST CONDITION
最小值
MIN
典型值
TYP
最大值 单位
MAX UNIT
-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
650
V
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/
ΔTj
ID=250uA, Referenced to
25°C
0.65
V/°C
栅极开启电压
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
2.0
4.0 V
-源漏电流
Drain-source Leakage Current
IDSS
跨导
Forward Transconductance
gfs
●订单信息/ORDERING INFORMATION:
VDS =600V,
VGS =0V, Tj=25°C
VDS =480V,
VGS =0V, Tj=125°C
VDS =40V, ID=5.0A
1 µA
10 µA
8S
包装形式/PACKING
TO-220 条管装/TUBE PACKING
TO-220FP 条管装/TUBE PACKING
TO-262 263 条管装/TUBE PACKING
TO-263 编带装/TAPE & REEL PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material
无卤塑封料/Halogen Free
SIF10N65C TO-220-TU
SIF10N65C TO-220-TU-HF
SIF10N65C TO-220FP-TU
SIF10N65C TO-220FP-TU-HF
SIF10N65C TO-262-TU
SIF10N65C TO-263-TU
SIF10N65C TO-262-TU-HF
SIF10N65CTO-263-TU-HF
SIF10N65C TO-263-TR
SIF10N65C TO-263-TR-HF
Si semiconductors 2015.1
1
SI Semiconductors
SI Semiconductors



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