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SIF10N40C Datasheet

N-CHANNEL POWER MOSFET

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SIF10N40C pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF10N40C
●特点:导通电阻低 开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE
RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
●最大额定值(TC=25°C
Absolute Maximum RatingsTc=25°C
TO-220/220FP/262/263
参数
符号
额定值
单位
PARAMETER
-源电压
Drain-source Voltage
-源电压
gate-source Voltage
SYMBOL
VDS
VGS
VALUE
400
±20
UNIT
V
V
漏极电流
Continuous Drain Current
TC=25
ID
10 A
漏极电流
Continuous Drain Current
TC=100
ID
6.3 A
最大脉冲电流
Drain Current Pulsed
IDM
40 A
耗散功率
Power Dissipation
TO-220:140
PD
TO-220FP:40
W
TO-262/263:140
最高结温
Junction Temperature
Tj
150 °C
存储温度
Storage Temperature
TSTG
-55-150
°C
单脉冲雪崩能量
Single Pulse Avalanche Energy
EAS
310 mJ
漏极电流由最高结温限制
Drain current limited by maximum junction temperature
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
符号
测试条件
最小值
PARAMETER
SYMBOL
TEST CONDITION
MIN
-源击穿电压
Drain-source Breakdown Voltage
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
栅极开启电压
Gate Threshold Voltage
BVDSS
ΔBVDSS/
ΔTj
VGS(TH)
VGS=0V, ID=250µA
ID=1mA, Referenced to
25°C
VGS=VDS, ID=250µA
400
2.0
-源漏电流
Drain-source Leakage Current
跨导
Forward Transconductance
IDSS
gfs
VDS =400V,
VGS =0V, Tj=25°C
VDS =320V,
VGS =0V, Tj=125°C
VDS =50V, ID=5A
5
VDS=400V
RDS(ON)=0.55Ω
ID=10.0A
典型值
TYP
最大值
MAX
单位
UNIT
V
0.49 V/°C
4.0 V
25 µA
250 µA
S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material 无卤塑封料/Halogen Free
TO-220 条管装/TUBE PACKING
SIF10N40C TO-220-TU
SIF10N40C TO-220-TU-HF
TO-220FP 条管装/TUBE PACKING
SIF10N40C TO-220FP-TU
SIF10N40C TO-220FP-TU-HF
TO-262 263 条管装/TUBE PACKING
SIF10N40C TO-262-TU
SIF10N40C TO-263-TU
SIF10N40C TO-262-TU-HF
SIF10N40C TO-263-TU-HF
TO-263 编带装/TAPE & REEL PACKING
SIF10N40C TO-263-TR
SIF10N40C TO-263-TR-HF
Si semiconductors 2013.5
1
SI Semiconductors
SI Semiconductors



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