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S9012 Datasheet

PNP Transistor

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S9012 datasheet pdf
S901 2
TRANSISTOR(PNP)
FEATURES
z Complementary to S9013
z Excellent hFE linearity
MARKING: 2T1
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
PC Collector Power Dissipation
Tj Junction Temperature
Tstg Storage Temperature
Value
-40
-25
-5
-500
300
150
-55-150
Units
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC= -100μA, IE=0
IC= -1mA, IB=0
IE=-100μA, IC=0
VCB=-40V, IE=0
MIN
-40
-25
-5
Collector cut-off current
ICEO
VCE=-20V, IB=0
Emitter cut-off current
IEBO VEB= -5V, IC=0
DC current gain
hFE VCE=-1V, IC= -50mA 120
Collector-emitter saturation voltage
VCE(sat) IC=-500mA, IB= -50mA
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
VBE(sat)
fT
Cob
IC=-500mA, IB= -50mA
VCE=-6V, IC= -20mA
f=30MHz
VCB=-10V,IE=0,f=1MHz
150
CLASSIFICATION OF hFE
Rank
Range
L
120-200
H
200-350
TYP MAX UNIT
V
V
V
-0.1 μA
-0.1 μA
-0.1 μA
400
-0.6 V
-1.2 V
MHz
5 pF
J
300-400
JinYu
semiconductor
www.htsemi.com
JinYu
JinYu



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