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S8550 Datasheet

PNP Transistor

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S8550 pdf
TRANSISTOR(PNP)
FEATURES
z Complimentary to S8050
z Collector current: IC=0.5A
MARKING : 2TY
SOT-23
SS8 95051 02
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-25
-5
-0.5
0.3
150
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Test conditions
IC = -100μA, IE=0
IC =-1mA, IB=0
IE= -100μA, IC=0
VCB= -40V, IE=0
VCE= -20V, IB=0
VEB= -3V, IC=0
VCE= -1V, IC= -50mA
VCE= -1V, IC= -500mA
IC=-500mA, IB= -50mA
IC=-500mA, IB= -50mA
VCE= -6V, IC= -20mA
f=30MHz
MIN
-40
-25
-5
120
50
150
CLASSIFICATION OF hFE(1)
Rank
Range
L
120-200
H
200-350
Units
V
V
V
A
W
MAX UNIT
V
V
V
-0.1 μA
-0.1 μA
-0.1 μA
400
-0.6 V
-1.2 V
MHz
JinYu
semiconductor
www.htsemi.com
JinYu
JinYu



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