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S8550 Datasheet

PNP Silicon Plastic-Encapsulate Transistors

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S8550 datasheet pdf
Elektronische Bauelemente
S8550
PNP Silicon
Plastic-Encapsulate Transistors
FEATURES
Complimentary to S8050
Collector Current: IC=0.5A
MARKING: 2TY
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
1
Base
3 Collector
2 Emitter
A
L
3
Top View
12
VG
BS
C
D
H
K
MAXIMUM RATINGS (TA=25OC unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
PC Collector Dissipation
Tj Junction Temperature
Tstg Storage Temperature
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
J
Value
-40
-25
-5
-0.5
0.3
150
-55-150
Units
V
V
V
A
W
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO
IC= -100 A, IE=0
IC=-1mA, IB=0
-40
-25
V
V
Emitter-base breakdown voltage
Collector cut-off current
V(BR)EBO
ICBO
IE=-100 A, IC=0
VCB=-40 V , IE=0
-5
V
-0.1 A
Collector cut-off current
ICEO
VCB=-20V , IE=0
-0.1 A
Emitter cut-off current
IEBO VEB= -3V , IC=0
-0.1 A
DC current gain
HFE(1)
HFE(2)
VCE=-1V, IC= -50mA
VCE=-1V, IC= -500mA
120
50
350
Collector-emitter saturation voltage
VCE(sat) IC=-500 mA, IB= -50mA
-0.6 V
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC=-500 mA, IB= -50mA
VCE=-6V, IC= -20mA
f=30MHz
150
-1.2 V
MHz
http://www.SeCoSGmbH.com
01-Jun-2007 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
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