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S8050 Datasheet

NPN Transistor

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S8050 datasheet pdf
TRANSISTOR(NPN)
FEATURES
z Complimentary to S8550
z Collector Current: IC=0.5A
MARKING: J3Y
S8 050
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
PC Collector Dissipation
Tj Junction Temperature
Tstg Storage Temperature
Value
40
25
5
0.5
0.3
150
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Units
V
V
V
A
W
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA, IE=0
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CEO
V(BR)EBO
IC=1mA, IB=0
IE=100μA, IC=0
Collector cut-off current
ICBO
VCB=40 V , IE=0
Collector cut-off current
ICEO
VCB=20V , IE=0
Emitter cut-off current
IEBO
VEB= 5V , IC=0
DC current gain
HFE(1)
HFE(2)
VCE=1V, IC= 50mA
VCE=1V, IC= 500mA
Collector-emitter saturation voltage
VCE(sat) IC=500 mA, IB= 50mA
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF hFE(1)
Rank
Range
VBE(sat)
fT
IC=500 mA, IB= 50mA
VCE=6V, IC= 20mA
f=30MHz
L
120-200
MIN
40
25
5
120
50
150
TYP MAX UNIT
V
V
V
0.1 μA
0.1 μA
0.1 μA
350
0.6 V
1.2 V
MHz
H
200-350
JinYu
semiconductor
www.htsemi.com
JinYu
JinYu



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