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S8050 Datasheet

NPN Silicon Plastic-Encapsulate Transistors

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S8050 datasheet pdf
Elektronische Bauelemente
S8050
NPN Silicon
Plastic-Encapsulate Transistors
FEATURES
Complimentary to S8550
Collector Current: IC=0.5A
MARKING: J3Y
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
Collector
3
1
Base
2
Emitter
A
L
3
Top View
12
BS
VG
C
D
H
K
J
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
MAXIMUM RATINGS (TA=25 OC unless otherwise noted)
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
40
25
5
0.5
0.3
150
-55-150
Units
V
V
V
A
W
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO
IC= 100 A, IE=0
IC=1mA, IB=0
40
25
V
V
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
V(BR)EBO
ICBO
ICEO
IEBO
IE=100 A, IC=0
VCB=40 V , IE=0
VCB=20V , IE=0
VEB= 5V , IC=0
5
V
0.1 A
0.1 A
0.1 A
DC current gain
Collector-emitter saturation voltage
HFE(1)
HFE(2)
VCE(sat)
VCE=1V, IC= 50mA
VCE=1V, IC= 500mA
IC=500 mA, IB= 50mA
120
50
350
0.6 V
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC=500 mA, IB= 50mA
VCE=6V, IC= 20mA
f=30MHz
150
1.2 V
MHz
http://www.SeCoSGmbH.com
01-Jun-2007 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
SeCoS
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