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OD-880W Datasheet

HIGH-POWER GaAlAs IR EMITTERS

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HIGH-POWER GaAlAs IR EMITTERS
OD-880W
GLASS
.006 HIGH
MAX
.015
1.00
MIN.
ANODE
(CASE)
.209
.220
.183 .152
.187 .156
.100
.098
.112
www.DataSheet4U.com
.017
.143
.150
.041
CATHODE
.036
45°
FEATURES
• High reliability liquid-phase epitaxially grown GaAlAs
• 880nm peak emission for optimum matching with
ODD-45W photodiode
• Wide range of linear power output
• Hermetically sealed TO-46 package
• Wide emission angle to cover a large area
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
Total Power Output, Po
Radiant Intensity, Ie
Peak Emission Wavelength, LP
Spectral Bandwidth at 50%, $L
Half Intensity Beam Angle, Q
Forward Voltage, VF
Reverse Breakdown Voltage, VR
Capacitance, C
Rise Time
IF = 100mA
IF = 50mA
IF = 100mA
IR = 10MA
VR = 0V
Fall Time
MIN
18
5
TYP
20
16
880
80
80
1.55
30
17
0.5
0.5
MAX
1.9
UNITS
mW
mW/sr
nm
nm
Deg
Volts
Volts
pF
Msec
Msec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
Continuous Forward Current
Peak Forward Current (10Ms, 400Hz)2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
190mW
100mA
3A
5V
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-55°C TO 100°C
Maximum Junction Temperature
Thermal Resistance, RTHJA1
Thermal Resistance, RTHJA2
100°C
400°C/W Typical
135°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
OptoDiode
OptoDiode



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