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OD-880L Datasheet

HIGH-POWER GaAlAs IR EMITTERS

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HIGH-POWER GaAlAs IR EMITTERS
OD-880L
GLASS
DOME
1.00
MIN.
ANODE
(CASE)
.015
.209
.220
.183 .152
.186 .156
.024
.043
.100
.017
.143
.150
CATHODE
.041
.036
45°
FEATURES
• High reliability liquid-phase epitaxially grown GaAlAs
• 880nm peak emission for optimum matching with
ODD-45W photodiode
• Wide range of linear power output
• Hermetically sealed TO-46 package
• Medium emission angle for best coverage/power
density
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, Po
Radiant Intensity, Ie
Peak Emission Wavelength, λP
Spectral Bandwidth at 50%, Δλ
Half Intensity Beam Angle, θ
Forward Voltage, VF
Reverse Breakdown Voltage, VR
Capacitance, C
Rise Time
Fall Time
TEST CONDITIONS
IF = 100mA
IF = 50mA
IF = 100mA
IR = 10μA
VR = 0V
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
Continuous Forward Current
Peak Forward Current (10μs, 400Hz)2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
Thermal Resistance, RTHJA1
Thermal Resistance, RTHJA2
MIN
TYP
MAX
UNITS
18 20
mW
50 mW/sr
880 nm
80 nm
35 Deg
1.55 1.9 Volts
5 30
Volts
17 pF
0.5 μsec
0.5 μsec
190mW
100mA
3A
5V
260°C
-55°C TO 100°C
100°C
400°C/W Typical
135°C/W Typical
Revision February 26, 2013
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
http://www.Datasheet4U.com
OPTO DIODE
OPTO DIODE



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