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OBTS949 Datasheet

Smart Lowside Power Switch

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OBTS949 pdf
HITFET®BTS 949
Smart Lowside Power Switch
Features
Product Summary
Logic Level Input
Drain source voltage
Input Protection (ESD)
On-state resistance
Thermal Shutdown
Current limit
Overload protection
Nominal load current
Short circuit protection
Clamping energy
Overvoltage protection
Current limitation
Maximum current adjustable with external resistor
Current sense
Status feedback with external input resistor
Analog driving possible
VDS
RDS(on)
ID(lim)
ID(ISO)
EAS
60 V
18 m
9.5 A
19 A
6000 mJ
Application
All kinds of resistive, inductive and capacitive loads in switching or
linear applications
µC compatible power switch for 12 V and 24 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS® chip on chip tech-
nology. Fully protected by embedded protected functions.
1
IN
2
NC
dv/dt
limitation
Current
limitation
Overvoltage
protection
Vbb
+
LOAD
Drain
3
M
4 CC
RCC
ESD
Overload
protection
Over-
temperature
protection
SShhoorrtt cciirrccuuiitt
pprrootteeccttiioonn
Source
HITFET®
5
Semiconductor Group
Page 1
14.07.1998
Siemens Semiconductor Group
Siemens Semiconductor Group



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